3 edition of Low-level germanium detector transfer standard at 1.064 [Greek letter mu] m found in the catalog.
Low-level germanium detector transfer standard at 1.064 [Greek letter mu] m
A. L. Rasmussen
by U.S. Dept. of Commerce, National Bureau of Standards, National Technical Information Service] in [Washington, D.C.], [Springfield, VA
Written in English
|Other titles||Low level germanium detector transfer standard at 1.064 [Greek letter mu] m|
|Statement||Alvin L. Rasmussen, Douglas L. Franzen|
|Series||NBSIR -- 85-3041|
|Contributions||Franzen, Douglas L|
|The Physical Object|
|Pagination||iii, 10 p. :|
|Number of Pages||10|
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[A L Rasmussen; Douglas L Franzen]. The MSU detectors utilize cylindrically-symmetric n-type coaxial germanium crystals.
These crystals have an external diameter of 70 mm and length of 80 outer contacts of the detectors are electronically divided into eight 10 mm wide disks in the lateral direction, and four-fold radial segmentation for a total of 32 segments. A schematic diagram of this segmentation Cited by: Germanium Detector Operating Notes ( to µm) General J16 Series detectors are high-quality Germanium photodiodes designed for the to nm wavelength range.
Detailed specifications are available for J16 Series room temperature detec-tors, parallel output arrays, Avalanche photodiodes and "two color" Size: 2MB. Ronald M. Keyser, Senior Member IEEE and Walter K. Hensley Abstract Œ The IEEE Germanium Test Standard () is widely used for the specification of HPGe detectors, but only specifies detector performance in limited situations.
Modeling programs such as MCNP are being used to predict the response of HPGe detectors in a wide variety of.
A method is presented to obtain efficiency calibration for samples of unknown composition in gamma spectrometry. It is based on photon transmission measurements using. A germanium spectrometer was constructed with the intention of achieving high sensitivity at low level background and large sample capacity (about.
The first high-frequency transistor was the surface-barrier germanium transistor developed by Philco incapable of operating up to 60 MHz. These were made by etching depressions into an N-type germanium base from both sides with jets of Indium(III) sulfate until it was a few ten-thousandths of an inch thick.
Indium electroplated into the depressions formed the collector. Other articles where Germanium detector is discussed: radiation measurement: Germanium detectors: Semiconductor detectors also can be used in gamma-ray spectroscopy.
In this case, however, it is advantageous to choose germanium rather than silicon as the detector material.
With an atomic number of 32, germanium has a much higher photoelectric cross section than .